A1 Journal article – refereed
Dynamic Polarization and Relaxation of 75As Nuclei in Silicon at High Magnetic Field and Low Temperature




List of Authors: J. Järvinen, J. Ahokas, S. Sheludyakov, O. Vainio, D. Zvezdov, L. Lehtonen, L. Vlasenko, S. Vasiliev
Publisher: SPRINGER WIEN
Publication year: 2017
Journal: Applied Magnetic Resonance
Volume number: 48
Issue number: 5
Number of pages: 11
eISSN: 1613-7507

Abstract

We present the results of experiments on dynamic nuclear polar-
ization and relaxation of 75 As in silicon crystals. Experiments are performed
in strong magnetic fields of 4.6 T and temperatures below 1 K. At these con-
ditions donor electron spins are fully polarized, and the allowed and forbidden
ESR transitions are well resolved. We demonstrate effective nuclear polar-
ization of 75 As nuclei via the Overhauser effect on the time scale of several
hundred seconds. Excitation of the forbidden transitions leads to a polariza-
tion through the solid effect. The relaxation rate of donor nuclei has strong
temperature dependence characteristic of Orbach process.


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