A1 Journal article – refereed
Oxidized crystalline (3 x 1)-O surface phases of InAs and InSb studied by high-resolution photoelectron spectroscopy

List of Authors: M. Tuominen, J. Lång, J. Dahl, M. Kuzmin, M. Yasir, J. Mäkelä, J. R. Osiecki, K. Schulte, M. P. J. Punkkinen, P. Laukkanen, and K. Kokko
Publication year: 2015
Journal: Applied Physics Letters
Journal name in source: APPLIED PHYSICS LETTERS
Journal acronym: APPL PHYS LETT
Volume number: 8
Issue number: 1
Number of pages: 4
ISSN: 0003-6951


The pre-oxidized crystalline (3 x 1)-O structure of InAs(100) has been recently found to significantly improve insulator/InAs junctions for devices, but the atomic structure and formation of this useful oxide layer are not well understood. We report high-resolution photoelectron spectroscopy analysis of (3 x 1)-O on InAs(100) and InSb(100). The findings reveal that the atomic structure of (3 x 1)-O consists of In atoms with unexpected negative (between -0.64 and -0.47 eV) and only moderate positive (In2O type) core-level shifts; highly oxidized group-V sites; and four different oxygen sites. These fingerprint shifts are compared to those of previously studied oxides of III-V to elucidate oxidation processes. (C) 2015 AIP Publishing LLC.

Last updated on 2019-20-07 at 08:02