Pekka Laukkanen


University Research Fellow, Materials Research Laboratory (Department of Physics and Astronomy)
Adjunct Professor, Department of Physics and Astronomy (Department of Physics and Astronomy)

peklau@utu.fi
Vesilinnantie 5
Turku





Publications
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1.32 um GaInNAs / GaAs laser with a low threshold current density (2002)
IEEE Photonics Technology Letters
C.S. Peng, T. Jouhti, P. Laukkanen, E.-M. Pavelescu, J. Konttinen, W. Li, M. Pessa
(
A1 Journal article – refereed)

An effect of vicinal surface morphology on adsorbate structure: Yb growth on [112]-tilt Si(111) (2002)
Surface Science
M. Kuzmin, P. Laukkanen, R.-L. Vanne, I.J. Väyrynen
(
A1 Journal article – refereed)

A new heterogeneously catalytic pathway for isomerization of linoleic acid over Ru/C and Ni/H-MCM-41 catalysts (2002)
Journal of Catalysis
A. Bernas, P. Laukkanen, N. Kumar, P. Mäki-Arvela, J. Väyrynen, E. Laine, B. Holmbom, T. Salmi, D.Y. Murzin
(
A1 Journal article – refereed)

Enhanced optical and structural properties of strain-compensated 1.3 um GaInNAs / GaNAs / GaAs quantum well laser structures (2002)
Journal of Crystal Growth
E.-M. Pavelescu, T. Jouhti, C.S. Peng, W. Li, J. Konttinen, M. Dumitrescu, P. Laukkanen, M. Pessa
(
A1 Journal article – refereed)

Structural, electrical, and optical properties of defects in Si-doped GaN grown by molecular-beam epitaxy on hydride vapor phase epitaxy GaN on sapphire (2002)
Journal of Applied Physics
P. Laukkanen, S. Lehkonen, P. Uusimaa, M. Pessa, J. Oila, S. Hautakangas, K. Saarinen, J. Likonen, and J. Keränen
(
A1 Journal article – refereed)

Emission studies of InGaN layers and LEDs grown by plasma-assisted MBE (2001)
Journal of Crystal Growth
P. Laukkanen, S. Lehkonen, P. Uusimaa, M. Pessa, A. Seppälä, T. Ahlgren, E. Rauhala
(
A1 Journal article – refereed)

Low threshold current 1.32 um GaInNAs / GaAs single quantum well lasers grown by molecular beam epitaxy (2001)
Applied Physics Letters
W. Li, T. Jouhti, C.S. Peng, J. Konttinen, P. Laukkanen, E.-M. Pavelescu, M. Dumitrescu, M. Pessa
(
A1 Journal article – refereed)

Growth of gallium nitride films by molecular beam epitaxy (2000) P. Laukkanen
(
G2 Master’s thesis, polytechnic Master’s thesis)

Plasma-assisted MBE growth of GaN on HVPE-GaN substrates (1999)
physica status solidi (c)
A. Rinta-Möykky, P. Laukkanen, S. Lehkonen, J. Dekker, A. Tukiainen, P. Uusimaa, M. Pessa
(
A1 Journal article – refereed)


Last updated on 2019-20-09 at 02:21